| PART |
Description |
Maker |
| 2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
| CM150DUS-12F |
IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:520W; Collector Emitter Voltage, Vceo:600V 150 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
| 2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW.
|
USHA India LTD
|
| 2SB1589 |
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
| 2SB1537 |
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
| FZT549 |
Power Collector dissipation: PC=2W, Continuous Collector Current: IC=-1A
|
TY Semiconductor Co., Ltd
|
| SL74HC257 SL74HC257D SL74HC257N HC257 |
; Collector Current:0.3A; Package/Case:3-TO-92; DC Current Gain Max (hfe):70000
Quad 2-Input Data Selector/Multiplexer with 3-State Outputs
|
System Logic Semiconductor Co., Ltd.
SLS[System Logic Semiconductor]
|
| 2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW.
|
USHA India LTD
|
| 2SD1006 |
High collector to emitter voltage: VCEO 100V. Collector-base voltage VCBO 100 V
|
TY Semiconductor Co., Ltd
|
| 74F38 N74F38N I74F38D I74F38N N74F38D I74F38N602 |
Quad 2-input NAND buffer (open collector) - Description: 2-Input NAND Buffer (Open Collector) ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: 64 mA ; Propagation delay: 10 ns; Voltage: 4.5-5.5 V; Package: Always Pb-free
Quad 2-input NAND buffer open collector
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| MJE210 |
PNP (COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 2SC3443 |
High hFE=150 to 800. High collector current (Ic=2A). High collector dissipation Pc=500mW.
|
TY Semiconductor Co., Ltd
|
